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许小勇

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Patents

ZnO量子点基深紫外传感器及制备方法

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Affilication of Author(s):扬州大学

Scope of patent:电学

School Sign:扬州大学

Patent Applicant:许小勇

Patent description:ZnO量子点基深紫外传感器及制备方法

Type of Patent:发明

State of Patent:有效

Application Number:201310346886.0

Number of Inventors:7

Service Invention or Not:no

Application Date:2013-08-08

Authorization Date:2017-05-31

First Author:Xu Xiaoyong

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