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Affilication of Author(s):国家纳米科学中心、扬州大学

Scope of patent:半导体器件与技术

School Sign:国家纳米科学中心、扬州大学

Patent Applicant:宫建茹

Patent description:一种忆阻器及其制备方法

Type of Patent:发明

Application Number:202010952340.X

Number of Inventors:4

Service Invention or Not:no

Application Date:2020-09-11

Authorization Date:2025-01-10

First Author:Yin Binfeng